Semiconductor memory device with magnetic disturbance reduced

Details Semiconductor memory device with magnetic disturbance reduced Semiconductor memory device with magnetic disturbance reduced

2005-11-22

2005-11-22

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S230060

Reexamination Certificate

active

06967862

ABSTRACT:
In writing data, when a bit line is selected and a data write current is caused to flow the selected bit line, a cancel current for canceling a magnetic field induced by the data write current is caused to flow in the direction opposite to the data write current on the selected bit line through a bit line adjacent to the selected bit line. Magnetic field interference between adjacent memory cells to each other is suppressed in a magnetic semiconductor memory device.

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Naji, et al. “A 256kb 3.0V 1T1MJT Nonvolatile Magnetoresistive RAM” IEEE International Solid-State Circuits Conference (2001) TA 7.6.

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