Static information storage and retrieval – Read/write circuit – Signals
Reexamination Certificate
2005-12-29
2008-11-11
Elms, Richard (Department: 2824)
Static information storage and retrieval
Read/write circuit
Signals
C365S191000, C365S233100
Reexamination Certificate
active
07450442
ABSTRACT:
A semiconductor memory device with an increased domain crossing margin is provided. The semiconductor memory device includes: a data input buffer for receiving an external data in response to a driving signal; a DQS input buffer for receiving an external data strobe signal in response to the driving signal; a delay unit for delaying an output signal of the DQS input buffer by a predetermined time; a division unit for dividing an output signal of the DQS input buffer to output a plurality of internal data strobe signals; and a data align unit for aligning an output data of the delay unit in response to the corresponding internal data strobe signals to output a plurality of align data.
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Blakely & Sokoloff, Taylor & Zafman
Elms Richard
Hynix / Semiconductor Inc.
Yang Han
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