Semiconductor memory device with increased capacitance of capaci

Details Semiconductor memory device with increased capacitance of capaci Semiconductor memory device with increased capacitance of capaci

1990-09-18

1992-12-15

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257532, 257754, H01L 2968, H01L 2978, H01L 2992

Patent

active

051722011

ABSTRACT:
Disclosed is a stacked capacitor type semiconductor memory device having an increased capacitance of a capacitor. An upward projection member projecting upward is provided on an interlayer insulation film. A storage node is provided on the interlayer insulation film to cover the upward projection member. A capacitor insulation film is provided to cover the storage node. A cell plate electrode is provided to cover the capacitor insulation film. With such a semiconductor memory device, the storage node is formed to cover the upward projection member provided on the interlayer insulation film, thereby to increase a surface area of the storage node.

REFERENCES:
patent: 4754313 (1988-06-01), Takemae et al.
patent: 4951175 (1990-08-01), Kurosawa et al.
patent: 4974040 (1990-11-01), Taguchi et al.

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