Semiconductor memory device with impurity areas around trench st

Details Semiconductor memory device with impurity areas around trench st Semiconductor memory device with impurity areas around trench st

1996-12-23

1999-11-23

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257336, 257397, 257390, 438262, H01L 2976, H01L 2994, H01L 31062, H01L 31119

Patent

active

059905298

ABSTRACT:
A semiconductor device and a fabrication method thereof which are capable of achieving a lightly doped drain (LDD) construction and reducing a parasitic capacitance generated between an impurity area and a word line by forming a trench in a portion of a semiconductor substrate and forming impurity areas around the trenches, include a semiconductor substrate, a plurality of trenches formed in the semiconductor substrate, first impurity areas formed along the outer surfaces of the plurality of trenches, second impurity areas formed on the bottom surfaces of the first impurity areas along the outer surfaces of the trenches, an insulating film filled in the trenches, a gate insulating film formed at a regular interval on the substrate having the insulating film filled in the trenches, and a gate electrode formed on the gate insulating film.

REFERENCES:
patent: 5278438 (1994-01-01), Kim et al.
patent: 5306941 (1994-04-01), Yoshida
patent: 5308781 (1994-05-01), Yuichi et al.
patent: 5424231 (1995-06-01), Yang
patent: 5424569 (1995-06-01), Prall
patent: 5436488 (1995-07-01), Poon et al.
patent: 5650340 (1997-07-01), Burr et al.

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