Semiconductor memory device with improved word line drive circui

Static information storage and retrieval – Read/write circuit – Including signal clamping

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365185, G11C 700

Patent

active

048687880

ABSTRACT:
A semiconductor memory device provided with an improved word line drive circuit is disclosed. The memory device comprises a pair of decoding units, a plurality of word lines, a plurality of N-channel transistors coupled between first ends of the word lines and the output terminal of one of the pair of decoding unit, and a plurality of P-channel transistors coupled between second, opposite ends of the word lines and the output terminal of the other of the pair of decoding units.

REFERENCES:
patent: 4807195 (1989-02-01), Busch et al.

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