Semiconductor memory device with improved sensing margin

Details Semiconductor memory device with improved sensing margin Semiconductor memory device with improved sensing margin

2008-10-02

2011-10-11

Nguyen, Tuan (Department: 2824)

Static information storage and retrieval

Read/write circuit

Testing

C365S200000, C365S191000, C365S226000

Reexamination Certificate

active

08036054

ABSTRACT:
A semiconductor memory device includes a signal generating unit for generating first and second enable signals in response to a power-up signal, a first sub-word line signal driving unit for driving a first sub-word line signal in response to the first enable signal, a first voltage supplying unit for supplying a first voltage to a pair of bit lines in response to the first enable signal, a second sub-word line signal driving unit for driving a second sub-word line signal in response to the second enable signal, and a second voltage supplying unit for supplying a second voltage to a pair of bit lines in response to the second enable signal.

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patent: 10-2003-0047074 (2003-06-01), None
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