Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate
2011-06-07
2011-06-07
Nguyen, Dang T (Department: 2824)
Static information storage and retrieval
Systems using particular element
Flip-flop
C365S226000, C365S229000
Reexamination Certificate
active
07957176
ABSTRACT:
A semiconductor memory device includes a first inverter ad a second inverter, a first power supply control circuit, and a second power supply control circuit. The first and second inverters constitute a memory cell and each have an input terminal and an output terminal connected crosswise to an output terminal and an input terminal, respectively, of the other. The first power supply control circuit supplies a first voltage to the first inverter. The second power supply control circuit supplies a second voltage to the second inverter. The first and second power supply control circuits control the first and second voltages, respectively, supplied to the first and second inverters in a selected memory cell for a writing operation in accordance with write data.
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K. Zhang, et al., “A 3-GHz 70Mb SRAM in 65nm CMOS Technology with Integrated Column-Based Dynamic Power Supply,” International Solid-State Circuits Conference (ISSCC) Digest of Technical Papers, Session 26, Non-Volatile Memory, 26.1, Feb. 9, 2005, pp. 474-475, 611.
Masanao Yamaoka, et al., “Low-Power Embedded SRAM Modules with Expanded Margins for Writing,” International Solid-State Circuits Conference (ISSCC) Digest of Technical Papers, Session 26, Static Memory, 26.4, Feb. 9, 2005, pp. 480-481, 611.
Kabushiki Kaisha Toshiba
Nguyen Dang T
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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