Semiconductor memory device with improved memory retention

Details Semiconductor memory device with improved memory retention Semiconductor memory device with improved memory retention

2006-02-14

2006-02-14

Mai, Son (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S149000, C365S210130

Reexamination Certificate

active

06999335

ABSTRACT:
A semiconductor memory device permitting the data “0” and the data “1” to be arbitrarily written to a reference cell capacitor for generating a reference potential, having a non-volatile capacitor for storing the data to be written. Fine adjustment of the reference potential is possible without a mask correction, which improves yield. The present invention also permits rewriting only the reference capacitors. As such, the dispersion of the reference potential can be controlled, and yield is improved.

REFERENCES:
patent: 5572459 (1996-11-01), Wilson et al.
patent: 5953277 (1999-09-01), Mukunoki et al.
patent: 5969979 (1999-10-01), Hirano
patent: 5978250 (1999-11-01), Chung et al.
patent: 6839289 (2005-01-01), Takahashi
patent: 8-115596 (1996-05-01), None

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