Semiconductor memory device with high speed read-modify-write fu

Details Semiconductor memory device with high speed read-modify-write fu Semiconductor memory device with high speed read-modify-write fu

1997-08-07

2000-06-06

Yoo, Do Hyun

Electrical computers and digital processing systems: memory

Storage accessing and control

Control technique

711168, 711169, G06F 1316

Patent

active

060732199

ABSTRACT:
The present invention provides a synchronous semiconductor memory device, from which data are read out, and to which the data are written after having been modified and corrected, which comprises a read data bus for transmitting said read data and a write data bus for transmitting said written data. In the memory device, the second read-modify-write (RMW) cycle can start during the first RMW cycle so that the memory device can decrease a RMW time in a continuous RMW operation and also speed up the RMW operation.

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1992 DRAM DataBook, Micron Technology, Rev. Dec. 1995, pp. 4-1 through 4-3.

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