Semiconductor memory device with ferroelectric memory

Details Semiconductor memory device with ferroelectric memory Semiconductor memory device with ferroelectric memory

2011-07-19

2011-07-19

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S149000, C438S003000, C257SE21001

Reexamination Certificate

active

07983067

ABSTRACT:
A semiconductor memory device includes plural word lines, plural first bit lines, plural plate lines formed corresponding to the word lines, plural second bit lines formed corresponding to the first bit lines, plural first ferroelectric capacitors each including a ferroelectric film between two electrodes, plural cell transistor formed corresponding to the first ferroelectric capacitors, and including a gate coupled to the word lines, plural second ferroelectric capacitors each including a ferroelectric film between two electrodes, and a sense amplifier configured to detect data stored in the first ferroelectric capacitors through the first bit lines or data stored in the second ferroelectric capacitors through the second bit line, or to write data in the first ferroelectric capacitors or the second ferroelectric capacitors. The first ferroelectric capacitors and the cell transistors connect between the first bit lines and the plate lines in series, and the second ferroelectric capacitors connect between the second bit lines and the word lines.

REFERENCES:
patent: 6141238 (2000-10-01), Forbes et al.
patent: 6191441 (2001-02-01), Aoki et al.
patent: 11-204747 (1999-07-01), None
patent: 2007-042164 (2007-02-01), None

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