Semiconductor memory device with dummy word line

Static information storage and retrieval – Read/write circuit – Differential sensing

Patent

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Details

3652335, G11C 702

Patent

active

060882794

ABSTRACT:
A semiconductor memory device includes a plurality of word lines and a plurality of bit lines arranged in a matrix and memory cells provided at intersections of the plurality of word lines and the plurality of bit lines. A dummy word line for detecting a low to high transition of a word line is provided parallel to the word line. By providing a dummy word line longer in length than a word line or the like to increase the delay in transition of the dummy word line, a reference potential to be detected can be set lower than conventional to reduce variation in detection timing.

REFERENCES:
patent: 5301157 (1994-04-01), Roberts
patent: 5999482 (1999-12-01), Kornachuk et al.

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