Semiconductor memory device with dual storage node and...

Details Semiconductor memory device with dual storage node and... Semiconductor memory device with dual storage node and...

2007-11-20

2007-11-20

Ngô, Ngân (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21008, C257SE27016

Reexamination Certificate

active

11353084

ABSTRACT:
A semiconductor memory device with a dual storage node structure as well as methods of fabricating and operating such a device are provided. The semiconductor memory device includes a substrate, a first transistor formed on the substrate, a first storage node connected to a source region of the first transistor, a second storage node connected to a drain region of the first transistor, and a plate line commonly contacting the first storage node and the second storage node.

REFERENCES:
patent: 2004/0150028 (2004-08-01), Horiguchi
patent: 2006/0267152 (2006-11-01), Forbes
patent: 10-2001-0004385 (2001-01-01), None
patent: 10-2002-0039457 (2002-05-01), None
Korean Patent Office Action dated Sep. 22, 2006, for corresponding Korean Patent Application No. 10-2005-0012039.

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