Semiconductor memory device with delay section

Details Semiconductor memory device with delay section Semiconductor memory device with delay section

2007-08-28

2007-08-28

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Read/write circuit

Signals

C365S233100, C365S236000

Reexamination Certificate

active

11389104

ABSTRACT:
In a semiconductor memory device, a reference delay section has a first delay value and delays a first signal by a reference delay value obtained from the first delay value and an adjustment value while changing the adjustment value, and fixes the adjustment value when the first signal and the delayed first signal meet a predetermined condition. A delay section has a second delay value and generates an output signal based on a summation of the fixed adjustment value and the second delay value, and a set multiplication value in response to a trigger signal such that the output signal in an active state for a period corresponding to the set multiplication value.

REFERENCES:
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patent: 2002-76858 (2002-03-01), None
patent: 2003-32104 (2003-01-01), None

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