Semiconductor memory device with dataline undershoot detection a

Details Semiconductor memory device with dataline undershoot detection a Semiconductor memory device with dataline undershoot detection a

1996-09-05

1998-01-13

Nelms, David C.

Static information storage and retrieval

Read/write circuit

Including level shift or pull-up circuit

365190, 365207, 365208, 365226, G11C 700, G11C 702, G11C 800

Patent

active

057086095

ABSTRACT:
An apparatus and method for use in a semiconductor memory device to detect dataline undershoot. The detection of dataline undershoot is used to reduce dataline recovery time and output buffer recovery time, thereby reducing read access time in the memory device. A dataline coupled between a memory array and a sensing amplifier is applied to one input of a voltage comparator and compared to a reference voltage. The presence of undershoot on the dataline causes the dataline voltage to drop below the reference voltage, resulting in a transition in the comparator output. This transition triggers a pulse generator which supplies a pulse to the gate of a field effect transistor coupled between the dataline and an equalization voltage centered in a sensing window of the sensing amplifier. The pulse turns on the transistor such that the dataline is coupled to the equalization voltage, resulting in a rapid pull-up of the dataline and a significant reduction in dataline undershoot and thereby the dataline recovery time. The detection of undershoot is also used to generate a second pulse which is applied to turn off or tri-state an output buffer of the memory device. This places the output buffer into a high impedance state during dataline undershoot which leads to a significantly reduced output buffer recovery time as well as reduced output buffer noise.

REFERENCES:
patent: 5029130 (1991-07-01), Yeh
patent: 5103423 (1992-04-01), Miyazaki et al.
patent: 5289411 (1994-02-01), Jeng et al.
patent: 5485427 (1996-01-01), Ogawa

Affiliated with

Also associated with

Rating

Semiconductor memory device with dataline undershoot detection a does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device with dataline undershoot detection a, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device with dataline undershoot detection a will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-331616