Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-09
2007-01-09
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S293000, C257S303000, C257S306000, C257S516000, C257S532000, C438S243000, C438S244000, C438S253000, C438S254000, C438S386000, C438S387000, C438S396000, C438S397000
Reexamination Certificate
active
10992963
ABSTRACT:
There are provided a semiconductor memory device including a cylindrical storage electrode and a method of manufacturing the same. The semiconductor memory device includes an interlevel dielectric layer with storage contact plugs formed on a semiconductor substrate. Cylindrical storage electrodes are formed above the interlevel dielectric layer and are electrically connected to the storage contact plugs. A spacer is coupled to a predetermined portion of the outer wall of the storage electrodes. A dielectric layer is formed on the storage electrode and on the spacer, and a plate electrode is formed above the dielectric layer. Accordingly, leaning and bit fail of the storage electrode are prevented.
REFERENCES:
patent: 2003/0027385 (2003-02-01), Park et al.
patent: 2003/0151083 (2003-08-01), Matsui et al.
patent: 2003/0207532 (2003-11-01), Chudzik et al.
patent: 2004/0021163 (2004-02-01), Bonart et al.
Choi Sung-Gil
Jeong Sang-Sup
Fourson George
García Joannie Adelle
Marger & Johnson & McCollom, P.C.
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