Semiconductor memory device with covered sidewall spacers

Static information storage and retrieval – Systems using particular element – Capacitors

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257295, G11C 1124

Patent

active

053717007

ABSTRACT:
A present invention provides a semiconductor memory device including a capacitor, in which the capacitor comprises an upper electrode, a lower electrode, a ferroelectric capacitor insulating film disposed between the upper electrode and the lower electrode, and a side wall spacer consisting of an insulating material being formed on the side wall of the lower electrode and/or the ferroelectric capacitor insulating film.

REFERENCES:
patent: 5081559 (1992-01-01), Fazan et al.
patent: 5187638 (1993-02-01), Sandhu et al.
patent: 5206788 (1993-04-01), Larson et al.
patent: 5216572 (1993-06-01), Larson et al.

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