Semiconductor memory device with bi-directional read and...

Details Semiconductor memory device with bi-directional read and... Semiconductor memory device with bi-directional read and...

2007-06-29

2009-12-29

Nguyen, Van Thu (Department: 2824)

Static information storage and retrieval

Read/write circuit

Including level shift or pull-up circuit

C365S203000, C365S230060, C365S206000, C365S063000

Reexamination Certificate

active

07639550

ABSTRACT:
A semiconductor memory device includes a pair of local input/output (IO) lines, a global IO line, a local driver configured to pull up/down voltage levels of the first and second local IO lines in response to input data, a global driver configured to pull up/down a voltage level of the global IO line in response to input data, and a data IO control block configured to transport output data from the local IO lines to the global driver and input data from the global IO line to the local driver.

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Kushiyama, N. et al., “An Experimental 295 MHz CMOS 4K × 256 SRAM Using Bidirectional Read/Write Shared Sense Amps and Self-Timed Pulsed Word-Line Drivers,” Nov. 1995, IEEE Journal of Solid-State Circuits, vol. 30, No. 11, pp. 1286-1290.

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