Semiconductor memory device with additional conductive line to p

Details Semiconductor memory device with additional conductive line to p Semiconductor memory device with additional conductive line to p

1992-10-13

1995-05-16

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257315, 257758, 257922, 257390, H01L 29772, H01L 27108

Patent

active

054163471

ABSTRACT:
A semiconductor memory device having wiring formed next to word lines at the extreme ends of the memory cell arrays or next to word lines of the dummy cell arrays, in order to prevent such word lines from breaking or from becoming deformed. The wiring is irrelevant to the circuit operation, but is provided with a fixed potential, and is formed through the steps of forming the word lines. The wiring makes the processing conditions applied to the neighboring word lines the same as the processing conditions applied to other word lines.

REFERENCES:
patent: 4392210 (1983-07-01), Chan
patent: 4612565 (1986-09-01), Shimizu et al.

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