Semiconductor memory device with a sense amplifier including two

Details Semiconductor memory device with a sense amplifier including two Semiconductor memory device with a sense amplifier including two

1996-03-29

1997-11-04

Nelms, David C.

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

365207, 365208, G11C 702

Patent

active

056847505

ABSTRACT:
A double current mirror type differential amplifier that can operate at high speed is only used for a predetermined time period to amplify speedily a potential difference according to data read out from a memory cell. When the potential difference amplified by the double current mirror type differential amplifier becomes greater than an offset voltage of a latch type amplifier, the potential difference is further amplified only with the latch type amplifier of low power consumption. By providing a double current mirror type differential amplifier that can operate at high speed but has great power consumption and a latch type amplifier that has low power consumption but cannot operate at high speed, the disadvantage of the double current mirror type differential amplifier is compensated for by the latch type amplifier, and the disadvantage of the latch type amplifier is compensated for by the advantage of the double current mirror type differential amplifier. Thus, high speed and low power consumption can be realized with an SSRAM (Synchronous Type Static Random Access Memory) including a double current mirror type differential amplifier and a latch type amplifier.

REFERENCES:
patent: 4811295 (1989-03-01), Shinoda
patent: 5367486 (1994-11-01), Mori et al.
patent: 5377150 (1994-12-01), McClure
patent: 5519661 (1996-05-01), Miura

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