Semiconductor memory device with a ring-shaped bit line

Details Semiconductor memory device with a ring-shaped bit line Semiconductor memory device with a ring-shaped bit line

1992-03-13

1993-12-14

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257382, 257401, 257905, H01L 2968, H01L 2978, H01L 2992

Patent

active

052705617

ABSTRACT:
The invention relates to a semiconductor memory device in which a bit line ring which functions as a bit line is formed at the upper and lower stage of the bit line and a storage node is formed to be overlapped in the same direction with said bit line formed perpendicularly to a word line to improve the integration degree.
Therefore, a capacitor area can be increased without an increase of an area of the unit cell to improve the integration degree of a semiconductor memory device and the generation of the bent portion of the active region can be avoided to decrease the distortion.

REFERENCES:
patent: 4864375 (1989-09-01), Teng et al.
patent: 5111275 (1992-05-01), Sawada et al.

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