Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit
Patent
1988-03-03
1989-11-07
Hecker, Stuart N.
Static information storage and retrieval
Read/write circuit
Including level shift or pull-up circuit
36518908, 365218, G11C 700, G11C 1140
Patent
active
048796867
ABSTRACT:
A semiconductor memory device comprising a memory cell-selecting section, an input supply control section, and a bit-line potential control section. The memory cell-selecting section includes a row decoder and a first gate circuit coupled to the output thereof. The memory cell-selecting section drives all the memory cells making up the memory device, when it is set in the mode for clearing the memory device, and the input data supply control section disconnects a pair of bit lines from a write circuit when the control section is set in this same mode. When the bit-line potential control section is set in the memory-clearing mode, it sets the potential of one of the bit lines at a high level, and the potential of the other bit line at a low potential.
REFERENCES:
patent: 4272834 (1981-06-01), Noguchi et al.
patent: 4393473 (1983-07-01), Rufford
patent: 4481610 (1984-11-01), Takemae et al.
patent: 4516224 (1985-05-01), Aoyama
patent: 4766571 (1988-08-01), Kawashima
patent: 4780847 (1988-10-01), Ito
Isobe Mitsuo
Ootani Takayuki
Suzuki Azuma
Bowler Alyssa H.
Hecker Stuart N.
Kabushiki Kaisha Toshiba
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