Semiconductor memory device with a capacitor formed therein...

Details Semiconductor memory device with a capacitor formed therein... Semiconductor memory device with a capacitor formed therein...

2008-03-11

2008-03-11

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S239000, C257S295000, C257SE21665

Reexamination Certificate

active

07341875

ABSTRACT:
To integrate a capacitor device (40) into the region of a semiconductor memory device with a particularly small number of process steps, a lower electrode device (43) and an upper electrode device (44) of the capacitor device (40) are provided to be formed directly underneath or directly above the material region (30) which has the memory elements (20), in such a way that as a result at least a part of the material region (30) which has the memory elements (20) functions at least as part of the respective dielectric (45) between the electrodes devices (43, 44).

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patent: 7038320 (2006-05-01), You et al.
patent: 2002/0140060 (2002-10-01), Asao et al.
patent: WO 00/52701 (2000-09-01), None
Patent Abstracts of Japan vol. 2000, No. 21, Aug. 3, 2001-& JP 2001 101859 A (Toshiba Corp), Apr. 13, 2001 ABSTRACT figures 4,6,8.
International Search Report.
Written Opinion.

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