Semiconductor memory device which can recover a memory fail

Details Semiconductor memory device which can recover a memory fail Semiconductor memory device which can recover a memory fail

2005-08-16

2005-08-16

Yoha, Connie C. (Department: 2818)

Static information storage and retrieval

Read/write circuit

Bad bit

C365S201000, C365S230010, C365S230020, C365S230030

Reexamination Certificate

active

06930933

ABSTRACT:
Redundancy circuits for accessing the stored data in the memory banks are provided in a semiconductor memory. First and second memory banks, each has 2N number of redundancy lines. Only N number of redundancy lines in each memory bank is utilized during normal operations. During normal operations, a first redundancy control block provides N number of redundancy signals to the first memory bank. A second redundancy control block provides N number of redundancy signals to the second memory bank. An address signal switching unit receives memory bank failure signals. During normal operations, the address signal switching unit multiplexes the N number of redundancy signals from the redundancy control block to the N number of redundancy lines of the corresponding memory bank. Upon failure of a memory bank, the address signal switching unit multiplexes the N number of the redundancy signals corresponding to the failed memory bank to the other operational memory bank so that the operational memory bank utilize a total of 2N number of redundancy lines.

REFERENCES:
patent: 5495447 (1996-02-01), Butler et al.
patent: 5548553 (1996-08-01), Cooper et al.
patent: 6021512 (2000-02-01), Lattimore et al.

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