Semiconductor memory device which can be set one from multiple t

Details Semiconductor memory device which can be set one from multiple t Semiconductor memory device which can be set one from multiple t

1998-06-18

2000-01-18

Phan, Trong

Static information storage and retrieval

Read/write circuit

Including signal comparison

36518909, 36518911, 365210, G11C 1604

Patent

active

060162767

ABSTRACT:
The semiconductor device of the present invention comprises a memory cell in which one threshold value is set out of n kinds of threshold values. The device includes, a word line for selecting the memory cell, an X decoder for selecting the word line, a sense amplifier for amplifying an output of the memory cell, n-1 reference cells in which n-1 kinds of threshold values are set, n-1 reference amplifier for amplifying an output of each of the reference cells, and an n-1 differential amplifier for receiving the output of each of the reference amplifier and the output of the sense amplifier. Further, the device includes an encoder for encoding the output of the n-1 differential amplifier. Finally, the semiconductor device of the present invention comprises a level shift circuit for supplying all the reference amplifier with a voltage which is half the voltage of adjacent threshold values lower than the voltage supplied to the word line.

REFERENCES:
patent: 4648074 (1987-03-01), Pollachek
patent: 5058063 (1991-10-01), Wada et al.
patent: 5202855 (1993-04-01), Morton
patent: 5297095 (1994-03-01), Sato et al.
patent: 5351212 (1994-09-01), Hashimoto
patent: 5602774 (1997-02-01), Elrabaa et al.
patent: 5828616 (1998-10-01), Bauer et al.

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