Static information storage and retrieval – Systems using particular element – Ferroelectric
Patent
1999-02-12
2000-11-28
Nelms, David
Static information storage and retrieval
Systems using particular element
Ferroelectric
365149, G11C 1122
Patent
active
06154387&
ABSTRACT:
The semiconductor memory device of this invention includes a capacitor, a first transistor, and a second transistor, wherein the capacitor includes a first electrode, a second electrode opposing the first electrode, and a ferroelectric film sandwiched by the first and second electrodes, and stores and holds binary information utilizing a polarizing state of the ferroelectric film, the first transistor includes a first electrode, a second electrode, and a gate electrode, the second electrode being connected to the first electrode of the capacitor, and the second transistor includes a first electrode, a second electrode, and a gate electrode, the first electrode being connected to the second electrode of the capacitor.
REFERENCES:
patent: 4888733 (1989-12-01), Mabley
patent: 5309391 (1994-05-01), Papaliolios
patent: 5357460 (1994-10-01), Yusuki et al.
patent: 5764561 (1998-06-01), Nishimura
patent: 5917746 (1999-06-01), Seyyedy
Sumi et al. "FA 16.2: A 256kb Nonvolatile Ferroelectric Memory at 3V and 100ns" 1994 IEEE International Solid-State Circuits Conference, Digest of Technical Papers (1994) 268-269.
Lam David
Nelms David
Sharp Kabushiki Kaisha
LandOfFree
Semiconductor memory device utilizing a polarization state of a does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device utilizing a polarization state of a , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device utilizing a polarization state of a will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1732191