Semiconductor memory device using tunneling magnetoresistive...

Details Semiconductor memory device using tunneling magnetoresistive... Semiconductor memory device using tunneling magnetoresistive...

2006-01-24

2006-01-24

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S063000, C365S158000, C365S189050

Reexamination Certificate

active

06990015

ABSTRACT:
A semiconductor memory device which uses tunneling magnetoresistive element as memory cells and eliminates the temperature dependencies in a write margin and read margin in such a way as to be able to accurately output a write current at the time of writing the memory cells. The semiconductor memory device is constructed in such a way that main bit lines or main word lines are laid out so as to cross bit lines or word lines perpendicularly, and a main bit line selector or a main word line selector which respectively selects the main bit line or the main word line is arranged outside a memory cell array.

REFERENCES:
patent: 6188615 (2001-02-01), Perner et al.
patent: 6191989 (2001-02-01), Luk et al.
patent: 6477077 (2002-11-01), Okazawa
patent: 6844605 (2005-01-01), Nishimura
patent: 2003/0156450 (2003-08-01), Higashi

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