Semiconductor memory device using sense amplifiers in a dummy ce

Details Semiconductor memory device using sense amplifiers in a dummy ce Semiconductor memory device using sense amplifiers in a dummy ce

1998-06-17

1999-09-28

Le, Vu A.

Static information storage and retrieval

Read/write circuit

Differential sensing

365205, 365210, G11C 700

Patent

active

059599200

ABSTRACT:
A semiconductor memory device comprises memory cells at least one pair of bit lines; word lines for taking out information from the memory cells into the pair of bit lines; sense amplifiers for detecting potential difference between the pair of the bit lines and amplifying it to a predetermined level; a write amplifier into which write data from outside are inputted and which drives the pair of data path lines for complementary data; inputting means and for providing the pair of data path lines to the respective pair of bit lines; and one or more amplifying means and for detecting potential difference between the pair of data path lines and amplifying it to a predetermined level. The sense amplifier in a sense amplifier area corresponding to the dummy cell area for treating the end portion of the memory cell array area and a word line-suspending section is used to drive the pair of data path lines in the middle of the wiring of the pair of data path lines, thereby carrying out high speed writing. Thus, it is possible to make writing speedier and reduce voltage used without making the size of the write amplifier large.

REFERENCES:
patent: 5841688 (1998-11-01), Sukegawa et al.
patent: 5864496 (1999-01-01), Mueller et al.

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