Semiconductor memory device using resonant-tunneling transistor

Details Semiconductor memory device using resonant-tunneling transistor Semiconductor memory device using resonant-tunneling transistor

1988-04-21

1990-03-06

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Negative resistance

357 4, 357 16, 357 57, G11C 1100, H01L 2712

Patent

active

049071963

ABSTRACT:
A semiconductor memory device comprises a transistor having such a current characteristic that a base current has a differential negative resistance characteristic and a collector current greatly flows after the differential negative resistance characteristic occurs in the base current when a base-emitter voltage is increased, a load coupled in series between a collector and a base of the transistor, first and second input terminals coupled to the base of the transistor through a base resistance of the transistor, and an ouptut terminal coupled to the collector of the transistor.

REFERENCES:
patent: 4712121 (1987-12-01), Yokoyama
patent: 4721983 (1988-01-01), Frazier
patent: 4786957 (1988-11-01), Muto
patent: 4788662 (1988-11-01), Mori
"Resonant-Tunneling Hot Electron Transistors (RHET): Potential and Applications", Naoki Yokoyama, Extended Abstracts of the 18th (1986, International), Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 347-350.

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