Semiconductor memory device using resonant-tunneling hot electro

Details Semiconductor memory device using resonant-tunneling hot electro Semiconductor memory device using resonant-tunneling hot electro

1987-06-12

1988-11-29

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Negative resistance

357 4, 357 57, 365179, G11C 1140, G11C 1300

Patent

active

047886625

ABSTRACT:
A semiconductor memory device comprises an address line, a write line, a read line, and a memory cell connected to the address, write and read lines, where the memory cell comprises a power source, an RHET, a switching element and a data transfer element. The power source is coupled to a base of the RHET through a first resistor so that the RHET has a plurality of stable states. The switching element is coupled between the write line and the base of the RHET, and is controlled by a signal from the address line. The data transfer element is coupled between a collector of the RHET and the read line, and the collector is coupled to the power source through a second resistor. When reading an information from the memory cell, a signal corresponding to one of the plurality of stable states of the RHET is transmitted to the read line via the data transfer element.

REFERENCES:
patent: 4712121 (1987-12-01), Yokoyama
patent: 4721983 (1988-01-01), Frazier

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