Semiconductor memory device using magnetoresistive effect

Details Semiconductor memory device using magnetoresistive effect Semiconductor memory device using magnetoresistive effect

2006-10-24

2006-10-24

Nguyen, Viet Q. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000, C365S066000, C365S230030, C365S230060, C365S196000

Reexamination Certificate

active

07126843

ABSTRACT:
A semiconductor memory device includes memory cell arrays, word lines, sub-sense lines, main sense line, row decoders, column decoders, first switch elements, read circuit, and write circuit. Each memory cell array has a matrix of memory cells including magnetoresistive elements. Each magnetoresistive element has first and second magnetic layers and a first insulating layer formed between the first and second magnetic layers. The word line is connected to the first magnetic layers on each row. The sub-sense line is connected to the second magnetic layers on each column. The main sense line is connected to each sub-sense line. The row decoder and column decoder select a word line and sub-sense line. The first switch element connects the sub-sense line selected by the column decoder to the main sense line. The read circuit reads out data from a memory cell. The write circuit writes data in a memory cell.

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