Semiconductor memory device using ferroelectric capacitor and ha

Details Semiconductor memory device using ferroelectric capacitor and ha Semiconductor memory device using ferroelectric capacitor and ha

1991-06-07

1995-03-21

Lee, Benny

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, 365203, G11C 700, G11C 1122

Patent

active

054002753

ABSTRACT:
A semiconductor memory device comprises a plurality of memory cells arranged in the form of a matrix to constitute rows-and columns, a plurality of first driving lines, connected to the memory cells, for transmitting a first driving signal to the memory cells, one of the plurality of first driving lines being selected by a row address, a plurality of second driving lines, connected to the memory cells, for transmitting a second driving signal to the memory cells, one of the plurality of second driving lines being selected by a column address, a plurality of read/write lines, connected to the memory cells, for performing read/write operations with respect to the memory cells, and a plurality of sense amplifiers connected to the read/ write lines, wherein one of the plurality of sense amplifiers is selected by the column address, and the memory cells in the same column are connected to the same sense amplifier through the read/write lines.

REFERENCES:
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 4893272 (1990-01-01), Eaton, Jr. et al.
patent: 5086412 (1992-02-01), Jaffe et al.
patent: 5121353 (1992-06-01), Natori
patent: 5136534 (1992-08-01), McDavid et al.
IEEE Journal of Solid State Circuits, vol. 24, No. 5, pp. 1206-1212, Oct., 1989, M. Aoki, et al., "A 1.5-V DRAM for Battery-Based Applications".

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