Semiconductor memory device using ferroelectric capacitor,...

Details Semiconductor memory device using ferroelectric capacitor,... Semiconductor memory device using ferroelectric capacitor,...

2006-10-17

2006-10-17

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S201000

Reexamination Certificate

active

07123501

ABSTRACT:
A semiconductor memory device includes a memory cell section having at least one memory cell using a cell transistor and a ferroelectric capacitor to store data. A sense amplifier is connected to the memory cell through a bit line. The device further includes an error checking and correction circuit which checks and corrects an error of data, which is read out of the memory cell by the sense amplifier, through the bit line.

REFERENCES:
patent: 6061266 (2000-05-01), Tan
patent: 6321360 (2001-11-01), Takeuchi et al.
patent: 6459608 (2002-10-01), Tamura
patent: 6704218 (2004-03-01), Rickes et al.
patent: 6934175 (2005-08-01), Nishihara
patent: 2002-175697 (2002-06-01), None

Affiliated with

Also associated with

Rating

Semiconductor memory device using ferroelectric capacitor,... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device using ferroelectric capacitor,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device using ferroelectric capacitor,... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3719187