Semiconductor memory device using compensation capacitors

Details Semiconductor memory device using compensation capacitors Semiconductor memory device using compensation capacitors

1993-12-13

1995-04-11

Hille, Rolf

Static information storage and retrieval

Systems using particular element

Capacitors

365203, 365214, 257296, G11C 1124, G11C 702

Patent

active

054065127

ABSTRACT:
The semiconductor device of the present invention utilizes pairs of compensation capacitors serially connected between corresponding pairs of bit lines and interconnected to a ground line of a sense amplifier driver, so that the transistional potential change in the ground line due to reading out current from adjacent memory cells is restricted, thereby eliminating the delay in the level change of the bit lines, thus enabling high speed access.

REFERENCES:
patent: 4792922 (1988-12-01), Mimoto et al.
patent: 4922460 (1990-05-01), Furutani et al.
patent: 5058072 (1991-10-01), Kashimura
Aoki et al., New DRAM Noise Generation Under Half-Vcc Precharge and its Reduction Using a Transposed Amplifier The Journal of Solid-State Circuits, vol. 24, No. 4 (Aug. 1989).
Krause et al., Optimized Sensing Scheme of DRAM's, The Journal of Solid-State Circuits, vol. 24, No. 4, (Aug. 1989).
Okamura et al., Decoded-Source Sense Amplifier for High-Density DRAM's, The Journal of Solid-State Circuits, vol. 25, No. 1 (Feb. 1990).

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