Semiconductor memory device to which test data is written

Details Semiconductor memory device to which test data is written Semiconductor memory device to which test data is written

2007-04-24

2009-10-20

Lee, Eugene (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S393000, C257S208000, C257S048000, C257SE21662, C365S201000, C365S185130, C365S185110, C365S230030

Reexamination Certificate

active

07605434

ABSTRACT:
A semiconductor memory device of this invention includes a first bank, a second bank, and a bank decoder that selects a bank to be activated from the first and second banks. When testing operations of first memory cells and second memory cells, the bank decoder simultaneously selects the first and second banks, and first and second write load circuits simultaneously write data in memory cells in first and second blocks, respectively.

REFERENCES:
patent: 6182262 (2001-01-01), Seyyedy
patent: 6262928 (2001-07-01), Kim et al.
patent: 6603683 (2003-08-01), Hsu et al.
patent: 6754116 (2004-06-01), Janik et al.
patent: 7319631 (2008-01-01), Cho
patent: 7333387 (2008-02-01), Hwang
patent: 7369444 (2008-05-01), Perego et al.
patent: 2003/0218217 (2003-11-01), Saito
patent: 2001-236795 (2001-08-01), None

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