Semiconductor memory device that uses a negative differential re

Details Semiconductor memory device that uses a negative differential re Semiconductor memory device that uses a negative differential re

1993-02-22

1994-05-10

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Semiconductive

36518901, 365174, G11C 1140

Patent

active

053114655

ABSTRACT:
A semiconductor memory device comprises a memory cell transistor that includes two active parts each including therein an emitter and a base and showing a negative differential resistance. The collector layer is shared commonly by the two active parts and is connected to a bit line, while the emitters forming the two active parts are connected to respective word lines that form a word line pair. The bit line and the word lines forming the word line pair are biased to realize a bistable operational state in the memory cell transistor to hold the information.

REFERENCES:
patent: 5216630 (1993-01-01), Nakase

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