Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2007-05-08
2007-05-08
Dinh, Son (Department: 2824)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S195000, C365S236000
Reexamination Certificate
active
11347293
ABSTRACT:
A semiconductor memory device includes a refresh counter that outputs an address of a word line to be refreshed, a ROM circuit that stores a relevant address related to a refresh defective address, and a multiple refresh control circuit that simultaneously or continuously activates the refresh defective address and the relevant address within one refresh cycle in response to a fact that the ROM circuit detects the relevant address. The multiple refresh control circuit excludes a pattern having a risk that a power supply potential or a ground potential varies greatly such as a pattern that the multiple refresh occurs continuously. With this arrangement, a refresh defective cell can be saved while restricting the variation in the power supply potential or the ground potential.
REFERENCES:
patent: 5559748 (1996-09-01), Numata et al.
patent: 6141288 (2000-10-01), Numata et al.
patent: 6487135 (2002-11-01), Watanabe et al.
patent: 2000-132963 (2000-05-01), None
Dono Chiaki
Koshikawa Yasuji
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