Semiconductor memory device that can have power consumption redu

Details Semiconductor memory device that can have power consumption redu Semiconductor memory device that can have power consumption redu

1998-04-23

2000-03-14

Nelms, David

Static information storage and retrieval

Read/write circuit

Data refresh

365226, 365203, 36518911, G11C 700

Patent

active

060381868

ABSTRACT:
In a self refresh mode, a precharge potential generation circuit provides a potential of a level that is lower than 1/2 the internal power supply potential level. An internal drive circuit provides the level of the internal power supply potential in a self refresh mode as the level of the signal to specify selective coupling between a sense amplifier and a bit line pair that takes a shared sense amplifier structure. The self refresh cycle time can be increased to lower the charging current of the bit line.

REFERENCES:
patent: 5412604 (1995-05-01), Fukuda et al.
patent: 5418753 (1995-05-01), Seki
patent: 5644544 (1997-07-01), Mizukami

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