Static information storage and retrieval – Read/write circuit – Particular read circuit
Reexamination Certificate
2011-03-29
2011-03-29
Tran, Andrew Q (Department: 2824)
Static information storage and retrieval
Read/write circuit
Particular read circuit
C365S189070, C365S189090, C365S189110, C365S190000, C365S208000, C365S207000
Reexamination Certificate
active
07916556
ABSTRACT:
A semiconductor memory device includes: a memory cell; a sense line; and a sense amplifier circuit connected to the memory cell via the sense line. The sense amplifier circuit includes a differential sense amplifier, a pull-up section, a read gate transistor, and a threshold correction section.
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Japanese Office Action issued Feb. 17, 2009 for corresponding Japanese Appliction No. 2007-121404.
Kitagawa Makoto
Otsuka Wataru
Rader & Fishman & Grauer, PLLC
Sony Corporation
Tran Andrew Q
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