Semiconductor memory device, semiconductor device and...

Details Semiconductor memory device, semiconductor device and... Semiconductor memory device, semiconductor device and...

2006-05-30

2006-05-30

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S201000

Reexamination Certificate

active

07053437

ABSTRACT:
A semiconductor memory device including memory cells, each memory cell including: a gate insulating film formed on a semiconductor substrate; a gate electrode formed on the gate insulating film; a channel region located below the gate electrode; a pair of source and drain regions arranged on a opposite sides, respectively, of the channel region, the source and drain regions having a conductive type opposite to that of the channel region; and memory functional units located on opposite sides, respectively, of the gate electrode, each memory functional unit including a charge retaining portion and an anti-dissipation insulator, the charge retaining portion being made of a material serving to store charges, the anti-dissipation insulator serving to prevent the stored charges from being dissipated by separating the charge retaining portion from both the gate electrode and the substrate, wherein a distance between a side wall of the gate electrode and a side of the charge retaining portion facing each other (T2) is adapted to differ from a distance between a bottom of the charge retaining portion and a surface of the substrate (T1).

REFERENCES:
patent: 6803620 (2004-10-01), Moriya et al.
patent: 5-81072 (1993-11-01), None
patent: 9-116119 (1997-05-01), None
patent: 2001-156189 (2001-06-01), None
patent: 2001-230332 (2001-08-01), None
patent: 2001-512290 (2001-08-01), None
patent: WO 99-07000 (1999-02-01), None
Masuoka Fujio, “Flash Memory Technology Handbook”, Science Forum Co. Ltd., Aug. 15, 1993, pp 55-58.

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