Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2006-09-26
2006-09-26
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S226000, C365S191000, C365S189090
Reexamination Certificate
active
07113440
ABSTRACT:
A semiconductor memory device includes: a self refresh request signal generation unit which receives a self refresh signal for generating a base periodic signal, a plurality of divided signals and a self refresh request signal; an internal voltage generation control signal generation unit for generating an internal voltage generation control signal in response to the plurality of divided signals; and an internal voltage generation unit for generating an internal voltage in response to the internal voltage generation control signal.
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Lee Jae-Jin
Lee Kang-Seol
Blakely & Sokoloff, Taylor & Zafman
Hoang Huan
Hynix / Semiconductor Inc.
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