Semiconductor memory device saving power during self refresh...

Static information storage and retrieval – Read/write circuit – Data refresh

Reexamination Certificate

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C365S226000, C365S191000, C365S189090

Reexamination Certificate

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07113440

ABSTRACT:
A semiconductor memory device includes: a self refresh request signal generation unit which receives a self refresh signal for generating a base periodic signal, a plurality of divided signals and a self refresh request signal; an internal voltage generation control signal generation unit for generating an internal voltage generation control signal in response to the plurality of divided signals; and an internal voltage generation unit for generating an internal voltage in response to the internal voltage generation control signal.

REFERENCES:
patent: 6002629 (1999-12-01), Kim et al.
patent: 6137743 (2000-10-01), Kim
patent: 6147927 (2000-11-01), Ooishi
patent: 6597614 (2003-07-01), Nam et al.
patent: 6611472 (2003-08-01), Kitamoto et al.
patent: 6693838 (2004-02-01), Hagura et al.

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