Semiconductor memory device, refresh control method thereof,...

Details Semiconductor memory device, refresh control method thereof,... Semiconductor memory device, refresh control method thereof,...

2007-04-17

2007-04-17

Ho, Hoai V. (Department: 2827)

Static information storage and retrieval

Read/write circuit

Data refresh

C365S236000

Reexamination Certificate

active

11249454

ABSTRACT:
The present invention provides a semiconductor memory device which reduces current consumption in a standby state owing to a suitable refresh-thinning-out function, and a refresh control method thereof. When the refresh-thinning-out function is added while a refresh operation and an external access operation are being executed independently of each other, a refresh address counter outputs a refresh address Add(C) and inputs predetermined high-order bits thereof to a refresh-thinning-out control as a high-order refresh address Add(C) (m), where judgment as to whether the refresh operation is performed, is made. A refresh permission signal RFEN corresponding to the result of judgment is inputted to a word driver to activate and control the word driver. The process of judgment by the refresh-thinning-out control circuit can be embedded in an access time of a row system.

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