Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit
Reexamination Certificate
2007-06-26
2007-06-26
Dinh, Son (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including level shift or pull-up circuit
C365S104000, C365S100000
Reexamination Certificate
active
11045383
ABSTRACT:
A semiconductor memory device includes a memory cell unit including at least one semiconductor memory cell, a voltage generating circuit which produces an operating voltage to which reference is made in performing a predetermined operation on the memory cell unit. The device further includes a constant-current circuit capable of a current trimming operation and adapted to supply a constant current to the voltage generating circuit.
REFERENCES:
patent: 5793674 (1998-08-01), Kubo et al.
patent: 5808953 (1998-09-01), Kim et al.
patent: 6163191 (2000-12-01), Miyagi
patent: 6549154 (2003-04-01), Isobe et al.
Dinh Son
Kabushiki Kaisha Toshiba
Nguyen Dang
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