Semiconductor memory device provided with capacitors formed abov

Details Semiconductor memory device provided with capacitors formed abov Semiconductor memory device provided with capacitors formed abov

1995-10-19

1997-08-26

Niebling, John

Fishing, trapping, and vermin destroying

437919, H01L 2170

Patent

active

056610637

ABSTRACT:
A semiconductor memory device provided with capacitors formed above and below a cell transistor includes first and second transistors formed in a first level, a first storage electrode connected to the first transistor and formed below the first level, and a second storage electrode connected to the second transistor and formed above the first level. The first and second storage electrodes are connected to each source via a spacer formed on the sidewalls of each source, and undercuts are formed between the storage electrode and the transistor, to thereby obtain double or more cell capacitance, stable cell transistor characteristic and reduced short-channel effects.

REFERENCES:
patent: 5436185 (1995-07-01), Hsue et al.
patent: 5439840 (1995-08-01), Jones, Jr. et al.
patent: 5573967 (1996-11-01), Tseng
patent: 5585284 (1996-12-01), Park

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