Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2008-07-29
2008-07-29
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S185050, C365S189170, C257S324000
Reexamination Certificate
active
07405974
ABSTRACT:
A semiconductor memory device includes a page buffer circuit and an arrangement of memory elements each including: a gate electrode provided on a semiconductor layer with an intervening gate insulating film; a channel region provided beneath the gate electrode; a diffusion area provided on both sides of the channel region, having an opposite polarity to the channel region; and a memory functioning member provided on both sides of the gate electrodes, having a function of storing electric charge. The page buffer circuit provides a common resource shared between a memory array controller and a user. The page buffer circuit has two planes containing random access memory arrays. The page buffer circuit also includes a mode control section to facilitate access to the planes over a main bus in user mode and access to the planes by the memory array controller in memory control mode.
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Iwase Yasuaki
Iwata Hiroshi
Morikawa Yoshinao
Nawaki Masaru
Shibata Akihide
Birch & Stewart Kolasch & Birch, LLP
Nguyen Tan T.
Sharp Kabushiki Kaisha
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