Semiconductor memory device overdriving for predetermined...

Details Semiconductor memory device overdriving for predetermined... Semiconductor memory device overdriving for predetermined...

2008-09-08

2010-10-12

Lam, David (Department: 2827)

Static information storage and retrieval

Read/write circuit

Including signal comparison

C365S205000, C365S207000, C365S203000, C365S230060

Reexamination Certificate

active

07813191

ABSTRACT:
A semiconductor memory device overdriving for a predetermined period when sense amplifying a bitline. An overdriving control unit generates an overdriver enabling signal having an enabling period including a point to enable a bitline sense amplifier and a point to select a column. An overdriver provides an overdrive voltage of a level higher than that of a normal pull-up drive voltage to a pull-up node of the bitline sense amplifier in response to the overdriver enabling signal. The data line pair provides a sufficient difference in potential even for a tRCD_min condition by preventing a drop in the potential of the bitline using the overdrive operation when selecting a column.

REFERENCES:
patent: 6754122 (2004-06-01), Wada et al.
patent: 7505343 (2009-03-01), Kang
patent: 7577045 (2009-08-01), Matano
patent: 1020060018973 (2006-03-01), None
patent: 1020070036634 (2007-04-01), None
patent: 1020070097805 (2007-10-01), None

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