Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2007-10-23
2007-10-23
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S189070, C365S225700
Reexamination Certificate
active
11200012
ABSTRACT:
A semiconductor memory device has an information storing circuit such as a fuse box as well as a memory cell array with redundant memory cells that can be used to replace defective memory cells. Address information indicating which memory cells have been replaced is stored in the information storing circuit, which also stores information identifying the semiconductor memory device. In one testing mode, the identifying information is output in response to input to a series of address signals that would normally select memory cells in the memory cell array. In another testing mode, roll call results are output indicating whether each input address matches an address stored in the information storing circuit. Use of address signals to elicit output of both identifying and roll call information saves space in the memory device.
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Auduong Gene N.
Oki Electric Industry Co. Ltd.
Volentine & Whitt P.L.L.C.
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