Patent
1989-11-20
1991-01-15
Mintel, William
357 45, 357 46, H01L 2978
Patent
active
049857185
ABSTRACT:
A semiconductor memory cell of one transistor - one capacitor memory cell type in which a storage capacitor of a first memory cell is formed on a switching transistor of a second memory cell as well as on a switching transistor of the first memory cell, and a storage capacitor of the second memory cell is formed on the switching transistor of the first memory cell as well as on the switching transistor of the second memory cell.
REFERENCES:
patent: 4612629 (1986-09-01), Harari
patent: 4649406 (1987-03-01), Takemae et al.
patent: 4685197 (1987-08-01), Tigelaar et al.
patent: 4849801 (1989-07-01), Honjyo et al.
M. Koyanagi et al., "Novel High Density, Stacked Capacitor MOS Ram", Int'l Electron Devices Meeting, 1978, pp. 348-351.
Mintel William
NEC Corporation
LandOfFree
Semiconductor memory device of one transistor-one capacitor memo does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device of one transistor-one capacitor memo, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device of one transistor-one capacitor memo will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-57377