Semiconductor memory device, method of writing data therein,...

Details Semiconductor memory device, method of writing data therein,... Semiconductor memory device, method of writing data therein,...

2008-06-06

2010-11-02

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Semiconductive

C365S063000, C365S072000

Reexamination Certificate

active

07826261

ABSTRACT:
A semiconductor memory device (1) has a FET (10) (first field-effect transistor), a FET (20) (second field-effect transistor), a contact plug (32) (first conductive plug), contact plugs (34) (second conductive plugs), and a detection circuit (50). The FET (20) is provided in a double well (40). M (m is a natural number) contact plugs (32) are connected to a diffusion layer (22) of the FET (20) while n (n is a natural number) contact plugs (34) are connected to a diffusion layer (24). Here, m is smaller than n. The detection circuit (50) detects the difference between the output of the FET (10) and the output of the FET (20).

REFERENCES:
patent: 5243559 (1993-09-01), Murai
patent: 5657271 (1997-08-01), Mori
patent: 5875129 (1999-02-01), Atsumi et al.
patent: 6498527 (2002-12-01), Matsumoto
patent: 2005-39220 (2005-02-01), None
patent: 2006-85753 (2006-03-01), None
patent: 2006-338773 (2006-12-01), None

Affiliated with

Also associated with

Rating

Semiconductor memory device, method of writing data therein,... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device, method of writing data therein,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device, method of writing data therein,... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4154108