Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2011-08-09
2011-08-09
Mai, Son L (Department: 2827)
Static information storage and retrieval
Systems using particular element
Resistive
C365S104000, C365S163000, C365S175000, C365S201000
Reexamination Certificate
active
07995374
ABSTRACT:
A memory cell comprises a variable resistance film; a first conductive film having one surface contacted with one surface of the variable resistance film; and a second conductive film having one surface contacted with another surface of the variable resistance film. A width of the first conductive film or the second conductive film in a direction orthogonal to a direction that a current flows in the first conductive film or the second conductive film is smaller than a width of the variable resistance film in a direction orthogonal to a direction that a current flows in the variable resistance film. The width of the first conductive film and the second conductive film is smaller than a width of the first line and the second line in a direction orthogonal to a direction that a current flows in the first line and the second line.
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Kishida Motoya
Komura Masanori
Murooka Ken-ichi
Sato Mitsuru
Kabushiki Kaisha Toshiba
Mai Son L
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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