Semiconductor memory device, method for driving the same and...

Details Semiconductor memory device, method for driving the same and... Semiconductor memory device, method for driving the same and...

2006-01-31

2006-01-31

Dinh, Son T. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185050, C365S185230

Reexamination Certificate

active

06992930

ABSTRACT:
A method for driving a semiconductor memory device includes a memory array having a plurality of memory cells arranged in rows and columns. Each memory cell includes a gate electrode formed on a semiconductor layer via a gate insulating film, a channel region disposed below the gate electrode, a source and a drain as diffusion regions disposed on both sides of the channel region and having a conductive type opposite to that of the channel region, and memory functional units formed on both sides of the gate electrode and having a function of retaining charges. The method includes the steps of: selecting a row line connected to the gate electrode of a memory cell to be selected; grounding a first column line connected to the source of the memory cell to be selected; and applying a first potential to a second column line and a second potential to a third column line at the same time.

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patent: 5563842 (1996-10-01), Challa
patent: 6147912 (2000-11-01), Kitazawa
patent: 05-304277 (1993-11-01), None

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